A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance
نویسندگان
چکیده
منابع مشابه
Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate
In this paper, a new Si/SiGe heterojunction tunneling field-effect transistor with a T-shaped gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas simulation. The two source regions of the HTG-TFET are placed on both sides of the gate to increase the tunneling area. The T-shaped gate is designed to overlap with N+ pockets in both the lateral and vertical directions, which increases the...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2020
ISSN: 1556-276X
DOI: 10.1186/s11671-020-03429-3